By N. V. Belov, E. N. Belova (auth.), A. A. Chernov (eds.)
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Additional resources for à ост Кристаллоь / Rost Kristallov / Growth of Crystals: Volume 11
Sample text
The basic concept of this discussion is that a substrate crystal or seed is an electrically active matrix and therefore crystallization is to be considered as a replication in an electrically active real crystal. The active structure is provided by a variety of defects, and point defects are of particular importance in crystallization, as in other heterogeneous processes. The actual structure reflects the features of the ideal structure in a regular fashion, and the basic structure influences many of the structure-sensitive properties via the real (defective) structure rather than directly.
H. van der Merwe, In: Single-Crystal Films [RuSSian translation], Mir, Moscow (1965), p. 172. HIGH-VOLTAGE ELECTRON MICROSCOPY OBSERVATION OF NUCLEATION AND GROWTH OF PRECIPITATES ON DISLOCATIONS IN AI-4% Cu ALLOY N. Takahashi and T. , Akishima, Tokyo 1. Introduction Particles of a second phase grow mainly at dislocations, but it is very difficult to use standard electron microscopes for continuous observation of nucleation and growth at a given point on account of the dimensional effect in thin films [1].
Physique, 32:128 (1938); D. Turnbull, In: Impurities and Defects [Russian translation], Metallurgizdat, Moscow (1960), p. 141. M. L. Lyubimov, Glass-Metal Joints [in Russian], Gosenergoizdat, Moscow (1957). B. Routh, Glass in Electronics [Russian translation], Sov. RadiO, Moscow (1969). B. K. Popov, Annuaire d'Inst. -Techn. (Sofia), 5(2):73 (1958). L. D. Landau and E. M. Lifshits, Theory of Elasticity [in Russian], Nauka, Moscow (1965), pp. 12-27. J. H. van der Merwe, In: Single-Crystal Films [RuSSian translation], Mir, Moscow (1965), p.
